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                          FFA60UP30DNTU PDF Datasheet浏览和下载

                          型号:
                          FFA60UP30DNTU
                          PDF下载:
                          下载PDF文件 在线浏览文档
                          内容描述:
                          [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
                          文件大?。?/dt>
                          5115 K
                          文件页数:
                          2 Pages
                          品牌Logo:
                          品牌名称:
                          THINKISEMI [ Thinki Semiconductor Co., Ltd. ]


                           浏览型号FFA60UP30DNTU的Datasheet PDF文件第2页 
                          FFA60UP30DNTU
                          Pb
                          Pb Free Plating Product
                          FFA60UP30DNTU
                          TO-3PB(TO-3PN)
                          Cathode(Bottom Side Metal Heatsink)
                          60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
                          APPLICATION
                          ·
                          ·
                          ·
                          ·
                          ·
                          ·
                          ·
                          Freewheeling, Snubber, Clamp
                          Inversion Welder
                          PFC
                          Plating Power Supply
                          Ultrasonic Cleaner and Welder
                          Converter & Chopper
                          UPS
                          PRODUCT FEATURE
                          ·
                          Ultrafast Recovery Time
                          ·
                          Soft Recovery Characteristics
                          ·
                          Low Recovery Loss
                          ·
                          Low Forward Voltage
                          ·
                          High Surge Current Capability
                          ·
                          Low Leakage Current
                          Internal Configuration
                          Base Backside
                          Anode
                          Anode
                          Cathode
                          GENERAL DESCRIPTION
                          FFA60UP30DNTU using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
                          Absolute Maximum Ratings
                          Parameter
                          Repetitive peak reverse voltage
                          Continuous forward current
                          Single pulse forward current
                          Maximum repetitive forward current
                          Operating junction
                          Storage temperatures
                          Symbol
                          V
                          RRM
                          I
                          F(AV)
                          I
                          FSM
                          I
                          FRM
                          Tj
                          Tstg
                          Test Conditions
                          Tc =110°C
                          Tc =25°C
                          Square wave, 20kHZ
                          Values
                          300
                          60
                          600
                          150
                          175
                          -55 to +175
                          °C
                          °C
                          A
                          Units
                          V
                          Electrical characteristics (Ta=25°C unless otherwise specified)
                          Parameter
                          Breakdown voltage
                          Blocking voltage
                          Forward voltage
                          (Per Diode)
                          Reverse leakage
                          current(Per Diode)
                          Reverse recovery
                          time(Per Diode)
                          Symbol
                          V
                          BR
                          ,
                          V
                          R
                          V
                          F
                          Test Conditions
                          I
                          R
                          =100μA
                          I
                          F
                          =30A
                          I
                          F
                          =30A, Tj =125°C
                          V
                          R
                          = V
                          RRM
                          I
                          R
                          Tj=150°C, V
                          R
                          =300V
                          I
                          F
                          =0.5A, I
                          R
                          =1A, I
                          RR
                          =0.25A
                          I
                          F
                          =1A,V
                          R
                          =30V, di/dt =200A/us
                          35
                          26
                          Min
                          300
                          0.96
                          0.85
                          1.20
                          1.00
                          10
                          100
                          45
                          40
                          μA
                          V
                          Typ.
                          Max.
                          Units
                          t
                          rr
                          ns
                          Thermal characteristics
                          Junction-to-Case
                          Paramter
                          Symbol
                          R
                          θJC
                          Typ
                          0.8
                          ℃/W
                          Units
                          Rev.08T
                          ? 1995 Thinki Semiconductor Co., Ltd.
                          Page 1/2
                          http://www.thinkisemi.com.tw/
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